MBE Systems, Sources and Components

Molecular Beam Epitaxy (MBE) is used in applications where thin film single crystals need to be grown, such as for the manufacture of semiconductor devices. MBE offers very low deposition rates (less than 50 nm per minute), which allows epitaxial growth. When performed in ultra-high vacuum (UHV) extremely pure films can be grown.

Edge Shutter

MBE & UHV Accessories

Deposition Sources

Deposition Sources

Complete MBE Systems

Complete MBE Systems